Opto-Electronic Characterization of Photocatalysts Based on p,n-Junction Ternary and Quaternary Mixed Oxides Semiconductors (Cu2O-In2O3 and Cu2O-In2O3-TiO2)

Semiconductor materials are the basis of electronic devices employed in communication and media industry. In present work, we report synthesis characterization mixed metal oxides (MOs) as p,n-junction photocatalysts, demonstrate correlation between preparation technique properties materials. Solid-state UV-visible diffuse reflectance spectroscopy (UV-VIS DRS) allowed for determination light absorption optical energy gap. X-ray photoelectron (XPS) surface speciation composition valence band edge. The opto-electronic behavior was evaluated measuring photocurrent generated after chopped visible a 3-electrode cell. Scanning electron microscopy (SEM) measurements auxiliary size morphology, showing formation composites ternary Cu2O-In2O3 p,n-mixed oxide, even more quaternary Cu2O-In2O3-TiO2 MO. Light spectra photocurrent-time curves mainly depend upon MOs, while gap defective tail closely related to methodology, time thermal treatment. Qualitative structures semiconductors also presented.